Suppression of recombinations in a dye-sensitized photoelectrochemical cell made from a film of tin IV oxide crystallites coated with a thin layer of aluminium oxide

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dc.contributor.authorKumara, G.R.R.A.
dc.contributor.authorTennakone, K.
dc.contributor.authorPerera, V.P.S.
dc.contributor.authorKonno, A.
dc.contributor.authorKaneko, S.
dc.contributor.authorOkuya, M.
dc.date.accessioned2015-10-26T07:39:44Z
dc.date.available2015-10-26T07:39:44Z
dc.date.issued2001
dc.identifier.citationJournal of Physics D Applied Physics, 34:p.868-873
dc.identifier.urihttps://dl-ifs.nsf.gov.lk/handle/1/737
dc.titleSuppression of recombinations in a dye-sensitized photoelectrochemical cell made from a film of tin IV oxide crystallites coated with a thin layer of aluminium oxide
dc.typeArticle

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