Fabrication of n-p junction electrodes made of n-type SnO2 and p-type NiO for control of charge recombination in dye sensitized solar cells

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dc.contributor.authorBanadara, J.
dc.contributor.authorDivarathne, C.M.
dc.contributor.authorNanayakkara, S.D.
dc.date.accessioned2015-11-20T10:17:11Z
dc.date.available2015-11-20T10:17:11Z
dc.date.issued2004
dc.identifier.citationSolar Energy Materials and Solar Cells, 81:p.429-437
dc.identifier.urihttps://dl-ifs.nsf.gov.lk/handle/1/866
dc.titleFabrication of n-p junction electrodes made of n-type SnO2 and p-type NiO for control of charge recombination in dye sensitized solar cells
dc.typeArticle

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